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Authors: Xu Zhu, Nicholas Yost, and Stewart Yang, presented at IMS 2025
Abstract— This paper introduces an edge-coupled differential SPDT MEMS switch for high-speed digital applications over 100Gbps. Built on an 8-inch fused silica wafer and hermetically sealed with a fused silica cap, it supports DC to 60GHz operation.
The ohmic contact switch design achieves <1dB differential insertion loss up to 60GHz, with >15dB differential return loss and 20dB differential isolation.
Index Terms— differential switch, RF MEMS, SPDT, Glass, CPWG
I. INTRODUCTION
In recent decades, data transfer rates in electrical systems have increased exponentially. Wireless communication has progressed from 384Kbps in GSM to over 20Gbps in today’s 5G networks.
The development of computer systems, data centers, and AI applications has pushed single-lane data rates from tens of Mbps to over 64Gbps, with the industry aiming for 224Gbps soon [1][2].
To support these speeds, a minimum channel bandwidth of DC-16GHz is required, ideally covering the 2nd and 3rd harmonics to maintain high-frequency information and ensure a larger eye opening. To mitigate noise and EMI, digital signals are transmitted differentially, necessitating well-matched differential pair trace designs. Optimizing line impedance and reflection for optimal performance relies heavily on RF/Microwave design techniques.
This paper presents the first true full-differential DC-60GHz switch design for differential signal routing. Network systems in data centers and test equipment for high-performance digital chips, such as AI chips, CPUs, GPUs, and memory, require constant re-routing or reconfiguration of signal paths. Semiconductor solutions face bandwidth limitations and challenges in handling different DC-biasing voltage levels and large signal capabilities.
