Function | Frequency | Insertion Loss | Isolation | IP3 | RON | COFF | Power (CW, max) | Switch Speed | Lifetime | Controller | VBB or VIN VDD | IDD or IVIN | Packaging | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MM5600 | DPDT | DC–20 GHz 40 Gbps | 1.3 dB @ 10 GHz | 24 dB @ 10 GHz | 77 dBm | 1.2 Ω | 10 fF | 2 W | <10 µs | >3B cycles | SPI** | 89 V 5 V | <4 mA | 8 x 8 mm LGA |
MM5620 | 2x DP3T | DC-20 GHz 64 Gbps | 2.3 dB @ 16 GHz | TBD dB @ 16 Ghz | TBD dBm | 1.2 Ω | TBD fF | TBD W | TBD µS | >3B cycles | SPI/GPIO | 5 V 3.3 V | TBD mA | 8.2 x 8.2 mm LGA |
MM5130 | SP4T (normal-port mode) SPST* (super-port mode) | DC–18 GHz DC–26 GHz | 0.1-1.3 dB 0.1-1.0 dB | 25dB @ 6 GHz 45dB @ 6 GHz | 95 dBm | 1.2 Ω | 15 fF | 25 W | <10 µs | >3B cycles | Direct Drive | 89 V | 2.5 x 2.5 mm WL-CSP | |
MM5120 | SP4T | DC–18 GHz | 0.1-1.5 dB | 26 dB @ 6 GHz | 90 dBm | 1.0 Ω | 2.5 fF | 25 W | <15 µs | >3B cycles | SPI/GPIO | 5 V 3.3 V | 1.5 mA | 5.2 x 4.2 mm LGA |
MM5140 | SP4T | DC-6 GHz | 0.1-0.4 dB | 32 dB @ 3 GHz | 90 dBm | 1.0 Ω | 2.5 fF | 25 W | <15 µs | >3B cycles | SPI/GPIO | 5 V 3.3 V | 1.5 mA | 5.2 x 4.2 mm LGA |
MM3100 | 6x SPST | DC–3 GHz | 0.1-0.5 dB | 23 dB @ 1.5 GHz | 85 dBm | 1.0 Ω | 2.5 fF | 25 W | <10 µs | 3B cycles | SPI** | 80 V 5 V | 10 µA | 6 x 6 mm BGA |
*Refer to datasheet for other configurations.
**SPI control signals: Data, Clock, Blank, Latch
The MM5130 is the world’s first generally available high-power RF SP4T Ideal Switch.
It can handle 25 W forward power while providing ultra-low insertion loss. It has superior linearity from 26 GHz down to DC and performs more than 3 billion switching cycles.
The four switch channels are individually controllable by applying voltage to the corresponding RF GATE pin.
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Top view
Bottom view
Bottom view
Profile view, featuring the through-glass-vias
The MM5130 on an evaluation kit board.
The MM5130 on a tunable filter.
MM5130 | EM (SMT) SPDT | EM (Coax) SPDT | Key Benefits | |
---|---|---|---|---|
Max Frequency | 26 GHz | 6 GHz | 18 GHz | |
Insertion Loss | 0.4 dB @ 6GHz | 0.8 dB @ 6GHz | 0.2 dB @ 6GHz | |
Isolation | 45 dB @ 6GHz | 25 dB | 70 dB @ 6GHz | |
Power Handling | 25 W (CW) >150 W (Pulsed) | 50 W | 50 W - 100 W | |
Linearity (IP3) | 95 dBm | 62 dBm | >1000x improvement | |
Power Consumption | <0.08 mW | 140 mW | 5000 mW | 94-99% reduction |
Reliability | >3B Operations | 10M Operations | 1-5M Operations | >1000x improvement |
Switching Speed | <10 µs | 3-5 ms | 10-20 ms | >1000x improvement |
Size/Channel Density | 5.6 mm3 2.5 x 2.5 x 0.9 mm BGA | 1280 mm3 16 x 8 x 10 mm SMT | 30,000 mm3 50 x 50 x 13 mm COAX | >99% reduction |
The MM5600 is a DPDT switch that can operate up to 40 Gbps and is perfect for high-speed differential signal switching.
The MM5600’s integrated driver can be controlled by a serial-to-parallel interface that drives the high voltage gate lines of the switches. The design also offers a considerable 94% reduction in size when compared to conventional EM relay solutions.
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MM5600 | EM (SMT) SPDT | Key Benefits | |
---|---|---|---|
Market | High-speed digital & RF DIB/PIB market | High-speed digital & RF DIB/PIB market | |
Configuration | DPDT, DC-20 GHz / 40 Gbps | DPDT, 20 Gbps | "Differential crossover" simplifies routing |
Power Consumption | < 0.08 mW | 200 mW | 99% reduction in power consumption |
Reliability | >3B operations | 1-5M operations | 1000x increase in lifetime: reduced down-time, maintenance and cost |
Switching Speed | <10 µs operation time <2 µs release time | 6 ms operation time | 1000x speed increase: reduced test time and cost-to-test |
Size/Chip Density | 102.4 mm3 8 x 8 x 1.6 mm LGA | 819 mm3 SMT 10.3(d) x 11.8 (h) | 94% volume reduction: enables more parallel tests, easier routing (top and/or bottom) |
The MM5120 is the world’s first generally available high-power RF SP4T Ideal Switch.
This new innovative technology platform enables robust and highly reliable switches capable of >25 W CW power handling at 6.0 GHz. The MM5120 provides ultra-low insertion loss and superior linearity from DC to 18 GHz with >3 billion switching cycles.
The MM5120 features an integrated charge pump and driver circuit with SPI and GPIO interface control options.
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MM5120 | EM (SMT) SPDT | EM (Coax) SPDT | Key Benefits | |
---|---|---|---|---|
Max Frequency | 18 GHz | 6 GHz | 18 GHz | |
Insertion Loss | 0.4 dB @ 6GHz | 0.8 dB @ 6GHz | 0.2 dB @ 6GHz | |
Isolation | >25 dB @ 6GHz | 25 dB | 70 dB @ 6GHz | |
Power Handling | 25 W (CW) >150 W (Pulsed) | 50 W | 50 W - 100 W | |
Linearity (IP3) | >90 dBm | 62 dBm | 99% reduction in power consumption | |
Power Consumption | <5 mW | 140 mW | 5000 mW | 94-99% reduction |
Reliability | >3B Operations | 10M Operations | 1-5M Operations | >1000x improvement |
Switching Speed | < 15 µs | 3-5 ms | 10-20 ms | >1000x improvement |
Size/Channel Density | 33 mm3 5.2 x 4.2 x 1.5 mm LGA | 1280 mm3 16 x 8 x 10 mm SMT | 30,000 mm3 50 x 50 x 13 mm COAX | >99% reduction |
The MM5140 is the world’s highest performance generally available RF SP4T Ideal Switch module.
This new innovative technology platform enables robust and highly reliable switches capable of >25 W CW power handling at 3.0 GHz. The MM5140 provides ultra-low insertion loss and superior linearity from DC to 6 GHz with >3 billion switching cycles.
The MM5140 features an integrated charge pump and driver circuit with SPI and GPIO interface control options.
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MM5140 | EM (SMT) SPDT | EM (Coax) SPDT | Key Benefits | |
---|---|---|---|---|
Max Frequency | 6 GHz | 6 GHz | 18 GHz | |
Insertion Loss | 0.4 dB @ 6GHz | 0.8 dB @ 6GHz | 0.2 dB @ 6GHz | |
Isolation | >26 dB @ 6GHz | 25 dB | 70 dB @ 6GHz | |
Power Handling | 25 W (CW) >150 W (Pulsed) | 50 W | 50 W - 100 W | |
Linearity (IP3) | >90 dBm | 62 dBm | 99% reduction in power consumption | |
Power Consumption | <5 mW | 140 mW | 5000 mW | 94-99% reduction |
Reliability | >3B Operations | 10M Operations | 1-5M Operations | >1000x improvement |
Switching Speed | < 15 µs | 3-5 ms | 10-20 ms | >1000x improvement |
Size/Channel Density | 33 mm3 5.2 x 4.2 x 1.5 mm LGA | 1280 mm3 16 x 8 x 10 mm SMT | 30,000 mm3 50 x 50 x 13 mm COAX | >99% reduction |
The MM3100 is the world’s first generally available high power, normally open, six channel Single Pole Single Throw (SPST) micro-mechanical switch for RF and microwave switch applications
It can handle 25 W forward power while providing ultra-low insertion loss. It has superior linearity from 3 GHz down to DC and performs more than 3 billion switching cycles.
Each switch channel can be individually controlled by a standard Serial Peripheral Interface (SPI) synchronous bus
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Top view
MM3100 | EM (SMT) SPDT | EM (Coax) SPDT | Key Benefits | |
---|---|---|---|---|
Max Frequency | 3 GHz | 6 GHz | 18 GHz | |
Insertion Loss | 0.5 dB @ 3GHz | 0.8 dB @ 6GHz | 0.2 dB @ 6GHz | |
Isolation | 18 dB @ 3GHz | 25 dB | 70 dB @ 6GHz | |
Power Handling | 25 W (CW) >200 W (Pulsed) | 50 W | 50 W - 100 W | |
Linearity (IP3) | 85 dBm | 62 dBm | >1000x improvement | |
Power Consumption | <0.3 mW | 140 mW | 5000 mW | 94-99% reduction |
Reliability | >3B Operations | 10M Operations | 1-5M Operations | >1000x improvement |
Switching Speed | <10 µs | 3-5 ms | 10-20 ms | >1000x improvement |
Size/Channel Density | 72 mm3 6 x 6 x 2 mm BGA | 1280 mm3 16 x 8 x 10 mm SMT | 30,000 mm3 50 x 50 x 13 mm COAX | >99% reduction |
The Menlo Micro Differential Dual DP3T relay supports the high-speed differential signal switching required in PCIe Gen 6, SerDes and other applications. The MM5620 is based on Menlo’s Ideal Switch® technology and can operate up to 64 GT/s or 20 GHz for high-performance applications.
The MM5620 has low insertion loss, fast switching speed, and can operate with greater than 3 billion switching cycles. The MM5620’s integrated charge pump and driver can be controlled through SPI or GPIO interfaces by a host processor.
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MM5620 | EM (SMT) SPDT | Key Benefits | |
---|---|---|---|
Market | High-speed digital & RF DIB/PIB market | High-speed digital & RF DIB/PIB market | |
Configuration | DP3T DC-20 GHz/64 Gbps | SPDT 18 GHz/40 Gbps | Dual DP3T with built-in loopback capacitor |
Power Consumption | < 10 mW | 200 mW | 95% reduction in power consumption |
Reliability | >3B operations | 3M operations | 1000x increase in lifetime: reduced down-time, maintenance and cost |
Switching Speed | TBD µs operation time
TBD µs release time | 5 ms operation time | TBD speed increase: reduced test time and cost-to-test |
Size/Chip Density | 141.2 mm3 8.2 x 8.2 x 2.1 mm LGA | 1103.3 mm3 SMT 11x8.5(d) x 11.8 (h) | 85% volume reduction: enables more parallel tests, easier routing (top and/or bottom) |