| Function | Frequency (Min-Max) | Insertion Loss | IP3 | RON | COFF | Isolation | Power (CW) | Switching Speed | Lifetime | Controller | Input Voltage | Packaging | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MM5130 | SP4T | DC–26 GHz | 1.3 dB | 95 dBm | 3 Ω | 10 fF | 18 dB | 25 W | <10 µs | >3B cycles | Direct Drive | 89 V | 2.5 x 2.5 mm WL-CSP |
| MM5600 | DPDT | DC–20 GHz/40 Gbps | 2.5 dB | 95 dBm | 3 Ω | 10 fF | 23 dB | 2 W | <10 µs | >3B cycles | Parallel | 89 V | 8 x 8 mm LGA |
| MM5120 | SP4T | DC–12 GHz | 0.7 dB | 95 dBm | 1.2 Ω | 10 fF | 22 dB | 25 W | <10 µs | >3B cycles | SPI/GPIO | 5 V | 5.2 x 4.2 mm LGA |
The MM5130 is the world’s first generally available high-power RF SP4T Ideal Switch.
It can handle 25 W forward power while providing ultra-low insertion loss. It has superior linearity from 26 GHz down to DC and performs more than 3 billion switching cycles.
The four switch channels are individually controllable by applying voltage to the corresponding RF GATE pin.
Top view
Bottom view
Bottom view
Profile view, featuring the through-glass-vias
The MM5130 on an evaluation kit board.
The MM5130 on a tunable filter.
 | EM (SMT) SPDT | EM (Coax) SPDT | Key Benefits | |
|---|---|---|---|---|
| Max Frequency | 26 GHz | 6 GHz | 18 GHz | |
| Insertion Loss | 0.2 dB @ 6GHz | 0.8 dB @ 6GHz | 0.2 dB @ 6GHz | |
| Isolation | >28 dB @ 6GHz | 25 dB | 70 dB @ 6GHz | |
| Power Handling | 25 W (CW) >150 W (Pulsed) | 50 W | 50 W - 100 W | |
| Linearity (IP3) | 95 dBm | 62 dBm | >1000x improvement | |
| Power Consumption | <0.08 mW | 140 mW | 5000 mW | 94-99% reduction |
| Reliability | >3B Operations | 10M Operations | 1-5M Operations | >1000x improvement |
| Switching Speed | <10 µs | 3-5 ms | 10-20 ms | >1000x improvement |
| Size/Channel Density | 5.6 mm3 2.5 x 2.5 x 0.9 mm BGA | 1280 mm3 16 x 8 x 10 mm SMT | 30,000 mm3 50 x 50 x 13 mm COAX | >99% reduction |
The MM5600 is a DPDT switch that can operate up to 40 Gbps and is perfect for high-speed differential signal switching.
The MM5600’s integrated driver can be controlled by a serial-to-parallel interface that drives the high voltage gate lines of the switches. The design also offers a considerable 94% reduction in size when compared to conventional EM relay solutions.
| EM (SMT) SPDT | Key Benefits | |
|---|---|---|---|
| Market | High-speed digital & RF DIB/PIB market | High-speed digital & RF DIB/PIB market | |
| Configuration | DPDT, DC-20 GHz / 40 Gbps | DPDT, 20 Gbps | "Differential crossover" simplifies routing |
| Power Consumption | < 0.08 mW | 200 mW | 99% reduction in power consumption |
| Reliability | >3B operations | 1-5M operations | 1000x increase in lifetime: reduced down-time, maintenance and cost |
| Switching Speed | <10 µs operation time <2 µs release time | 6 ms operation time | 1000x speed increase: reduced test time and cost-to-test |
| Size/Chip Density | 102.4 mm3 8 x 8 x 1.6 mm LGA | 819 mm3 SMT 10.3(d) x 11.8 (h) | 94% volume reduction: enables more parallel tests, easier routing (top and/or bottom) |
The MM5120 is the world’s first generally available high-power RF SP4T Ideal Switch.
This new innovative technology platform enables robust and highly reliable switches capable of >25 W CW power handling at 6.0 GHz. The MM5120 provides ultra-low insertion loss and superior linearity from DC to 12 GHz with >3 billion switching cycles guaranteed at +85 °C.
The MM5120 features an integrated charge pump and driver circuit with SPI or GPIO interface control options.
| EM (SMT) SPDT | EM (Coax) SPDT | Key Benefits | |
|---|---|---|---|---|
| Max Frequency | 12 GHz | 6 GHz | 18 GHz | |
| Insertion Loss | 0.35 dB @ 6GHz | 0.8 dB @ 6GHz | 0.2 dB @ 6GHz | |
| Isolation | >25 dB @ 6GHz | 25 dB | 70 dB @ 6GHz | |
| Power Handling | 25 W (CW) >150 W (Pulsed) | 50 W | 50 W - 100 W | |
| Linearity (IP3) | >95 dBm | 62 dBm | 99% reduction in power consumption | |
| Power Consumption | <5 mW | 140 mW | 5000 mW | 94-99% reduction |
| Reliability | >3B Operations | 10M Operations | 1-5M Operations | >1000x improvement |
| Switching Speed | < 10 µs | 3-5 ms | 10-20 ms | >1000x improvement |
| Size/Channel Density | 46 mm3 5 x 4 x 2.3 mm BGA | 1280 mm3 16 x 8 x 10 mm SMT | 30,000 mm3 50 x 50 x 13 mm COAX | >99% reduction |
