|MM5130||SP4T||DC–26 GHz||1.3 dB||95 dBm||3 Ω||10 fF||18 dB||25 W||<10 µs||>3B cycles||Direct Drive||89 V||2.5 x 2.5 mm WL-CSP|
|MM5600||DPDT||DC–20 GHz/40 Gbps||2.5 dB||95 dBm||3 Ω||10 fF||23 dB||2 W||<10 µs||>3B cycles||Parallel||89 V||8 x 8 mm LGA|
|MM5120||SP4T||DC–12 GHz||0.7 dB||95 dBm||1.2 Ω||10 fF||22 dB||25 W||<10 µs||>3B cycles||SPI/GPIO||5 V||5.2 x 4.2 mm LGA|
The MM5130 is the world’s first generally available high-power RF SP4T Ideal Switch.
It can handle 25 W forward power while providing ultra-low insertion loss. It has superior linearity from 26 GHz down to DC and performs more than 3 billion switching cycles.
The four switch channels are individually controllable by applying voltage to the corresponding RF GATE pin.
The MM5600 is a DPDT switch that can operate up to 40 Gbps and is perfect for high-speed differential signal switching.
The MM5600’s integrated driver can be controlled by a serial-to-parallel interface that drives the high voltage gate lines of the switches. The design also offers a considerable 94% reduction in size when compared to conventional EM relay solutions.
The MM5120 is the world’s first generally available high-power RF SP4T Ideal Switch.
This new innovative technology platform enables robust and highly reliable switches capable of >25 W CW power handling at 6.0 GHz. The MM5120 provides ultra-low insertion loss and superior linearity from DC to 12 GHz with >3 billion switching cycles guaranteed at +85 °C.
The MM5120 features an integrated charge pump and driver circuit with SPI or GPIO interface control options.