Authors: Stewart Yang, Ian Burke, presented at IEEE ETS
Abstract—This paper introduces a Differential DP3T MEMS switch for high-speed digital applications over 64 Gbps. Ever-increasing electronic system performance is forcing faster communication between chipsets and memories. Precision high-speed testing of chipsets on design-in-boards is forcing test engineers to utilize higher precision components on loopback paths.
Switches to route the signals back into the DUT have become widely adopted on design-in-boards as a method for precision high-speed testing of chipsets. Many of these paths include PCIe 5.0/6.0, and other high-speed SerDes interfaces.
One of the limiting factors with increasing data rates, such as PCIe 5.0/6.0 specifications, is the switch performance at higher frequencies. The MEMS switch has a switching speed of 10us versus milli seconds range for a bulky EM relay. This allows for a significant increase in test speed and DUT throughput.
The small size of the device enables higher test site density so again increasing DUT throughput. The lifespan of the MEMS switch is three billion cycles, compared to up to ten million life cycles for EM relays could help reduce the test system downtime.
Keywords—SerDes, PCIe Gen5, PCIe Gen6, CXL, MEMS switch, Loopback test, Differential switch