|MM5130||SP4T||DC–26GHz||1.3 dB||>85 dBm||0.5 Ω||10 fF||18 dB||25 W||<10 µs||>3B cycles||Direct Drive||89 V||2.5 x 2.5 mm WL-CSP|
|MM5600||DPDT||DC–20GHz||1.3 dB||>85 dBm||0.5 Ω||10 fF||18 dB||8 W||<10 µs||>3B cycles||Parallel||89 V||8 x 8 mm QFN|
|MM5120||SP4T||DC–12GHz||0.75 dB||>85 dBm||0.5 Ω||10 fF||22 dB||25 W||<10 µs||>3B cycles||Parallel||3.3 V||4 x 4 mm BGA|
The MM5130 is the world’s first generally available high-power RF SP4T Ideal Switch.
It can handle 25 W forward power while providing ultra-low insertion loss. It has superior linearity from 26 GHz down to DC and performs more than 3 billion switching cycles.
The four switch channels are individually controllable by applying voltage to the corresponding RF GATE pin.
The MM5600 is a high-power DPDT switch that can operate at greater than 20 Gbps and is perfect for high-speed differential signal switching.
The MM5600’s integrated driver can be controlled by a serial-to-parallel interface that drives the high voltage gate lines of the switches. The design also offers a considerable 94% reduction in size when compared to conventional EM relay solutions.
The MM5120 is the world’s first generally available high-power RF SP4T Ideal Switch.
This new innovative technology platform enables robust and highly reliable switches capable of >25 W CW power handling at 6.0 GHz. The MM5120 provides ultra-low insertion loss and superior linearity from 12 GHz down to DC, with >3 billion switching cycles guaranteed at +85 °C.
Integrated high voltage generation simplifies usage when only a single low voltage is required for operation.